Positioning Effect of Type-II GaSb/GaAs Quantum Ring Layer on Solar Cell Performances

標題:	Positioning Effect of Type-II GaSb/GaAs Quantum Ring Layer on Solar Cell Performances
作者:	Hsu, Shun-Chieh Chen, Yin-Han Chen, Hsuan-An Lin, Shih-Yen Shen, Tien-Lin Kuo, Hao-Chung Shih, Cheng-Lun Sheu, Jinn-Kong Lin, Chien-Chung 光電系統研究所照明與能源光電研究所光電工程學系 Institute of Photonic System Institute of Lighting and Energy Photonics Department of Photonics
關鍵字:	Type-II heterojunction;Quantum rings;solar cells;GaAs;GaSb;Concentrated sunlight operations
公開日期:	2015
摘要:	In this work, we demonstrate the positioning effect of the type-II quantum ring (QR) on the solar cell efficiencies. The QR layer was placed in either p-type or n-type region to test its effect on the performance. Under one Sun condition, the one with p-type QR layer has better efficiency and open-circuit voltage. But this advantage loses quickly when the sunlight is concentrated over 20 times. From the concentrated sunlight measurement, the sample with QR layer in the n-type region can sustain the V-oc reduction until 80 Suns.
URI:	http://hdl.handle.net/11536/135951
ISBN:	978-1-4799-7944-8
ISSN:	0160-8371
期刊:	2015 IEEE 42ND PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC)
Appears in Collections:	Conferences Paper