標題: Thin-Silicon Injector (TSI): an All-Silicon Engineered Barrier, Highly Nonlinear Selector for High Density Resistive RAM Applications
作者: Govoreanu, B.
Zhang, L.
Crotti, D.
Fan, Y. -S.
Paraschiv, V.
Hody, H.
Witters, T.
Meersschaut, J.
Clima, S.
Adelmann, C.
Jurczak, M.
交大名義發表
National Chiao Tung University
關鍵字: selector;amorphous-Silicon (a-Si);SiNx;engineered Si barrier;Resistive RAM (RRAM)
公開日期: 2015
摘要: We report on a novel Thin-Silicon Injector (TSI) selector concept with bidirectional operation for high density resistive switching memory. Model-based analysis shows how the current drive-nonlinearity trade-off can be broken by properly combining physical material properties to enable decoupling control parameters of the current injection from those of selectivity. We demonstrate experimentally structures down to 40nm-size, featuring a high-drive current of similar to 1MA/cm(2), high current-voltage half-bias nonlinearity exceeding 6.10(3) at maximum current drive and very good reliability of > 10(7) cy endurance, with limited degradation of the selectivity. The selector has below 20nm thickness and it is fully implementable with readily available BEOL CMOS-compatible materials and processes.
URI: http://hdl.handle.net/11536/135959
ISBN: 978-1-4673-6933-6
ISSN: 2330-7978
期刊: 2015 IEEE 7TH INTERNATIONAL MEMORY WORKSHOP (IMW)
起始頁: 69
結束頁: 72
顯示於類別:會議論文