Coreshell InGaN/GaN MQW Nanorod Photovoltaic Device

Abstract

We report the fabrication and study of coreshell InGaN/GaN multiple quantum well (MQW) nanorod photovoltaic device. The nanorods were fabricated from a GaN substrate by top-down etch, followed by InGaN/GaN MQW growth. The 3D geometry allows higher Indium incorporation and extends the solar absorption spectral range as compared with a planar reference sample. The proof-of-concept coreshell nanorod photovoltaic device has a fill factor of about 54.2%, the short current density of 1.16 mA/cm(2), the open circuit voltage of 0.68 V, and the power conversion efficiency of 0.38%, respectively.