Interband magneto-optical transitions in a layer of semiconductor nano-rings

doi:10.1209/epl/i2004-10516-7

Full metadata record

DC Field	Value	Language
dc.contributor.author	Voskoboynikov, O	en_US
dc.contributor.author	Wijers, CMJ	en_US
dc.contributor.author	Liu, JL	en_US
dc.contributor.author	Lee, CP	en_US
dc.date.accessioned	2014-12-08T15:18:53Z	-
dc.date.available	2014-12-08T15:18:53Z	-
dc.date.issued	2005-06-01	en_US
dc.identifier.issn	0295-5075	en_US
dc.identifier.uri	http://dx.doi.org/10.1209/epl/i2004-10516-7	en_US
dc.identifier.uri	http://hdl.handle.net/11536/13597	-
dc.description.abstract	We have developed a quantitative theory of the collective electromagnetic response of layers of semiconductor nano-rings. The response can be controlled by means of an applied magnetic field through the optical Aharonov-Bohm effect and is ultimately required for the design of composite materials. We demonstrate that the local field is of paramount importance in the description of such layers. The changes in ellipsometric parameters are 2 to 3 orders of magnitude above the detection limit of a modern ellipsometer.	en_US
dc.language.iso	en_US	en_US
dc.title	Interband magneto-optical transitions in a layer of semiconductor nano-rings	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1209/epl/i2004-10516-7	en_US
dc.identifier.journal	EUROPHYSICS LETTERS	en_US
dc.citation.volume	70	en_US
dc.citation.issue	5	en_US
dc.citation.spage	656	en_US
dc.citation.epage	662	en_US
dc.contributor.department	應用數學系	zh_TW
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Applied Mathematics	en_US
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000229819000014	-
dc.citation.woscount	2	-
Appears in Collections:	Articles

Files in This Item:

000229819000014.pdf

If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.