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dc.contributor.authorChiu, Yu-Chienen_US
dc.contributor.authorCheng, Chun-Huen_US
dc.contributor.authorFan, Chia-Chien_US
dc.contributor.authorChen, Po-Chunen_US
dc.contributor.authorChang, Chun-Yenen_US
dc.contributor.authorLee, Min-Hungen_US
dc.contributor.authorLiu, Chienen_US
dc.contributor.authorYen, Shiang-Shiouen_US
dc.contributor.authorHsu, Hsiao-Hsuanen_US
dc.date.accessioned2017-04-21T06:48:41Z-
dc.date.available2017-04-21T06:48:41Z-
dc.date.issued2015en_US
dc.identifier.isbn978-1-4673-8135-2en_US
dc.identifier.urihttp://hdl.handle.net/11536/135989-
dc.language.isoen_USen_US
dc.titleInterface Polarization Fluctuation Effect of Ferroelectric Hafnium-Zirconium-Oxide Ferroelectric Memory with Nearly Ideal Subthreshold Slopeen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2015 73RD ANNUAL DEVICE RESEARCH CONFERENCE (DRC)en_US
dc.citation.spage41en_US
dc.citation.epage42en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000380440500011en_US
dc.citation.woscount0en_US
顯示於類別：會議論文


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