Demonstration of 3D Vertical RRAM with Ultra Low-leakage, High-selectivity and Self-compliance Memory Cells

Abstract

Developing high performance self-selective cell (SSC) is one of the most critical issues of the integration of 3D vertical RRAM (V-RRAM). In this work, a four-layer V-RRAM array, with high performance HfO2/mixed ionic and electronic conductor (MIEC) bilayer SSC, was demonstrated for the first time. Several salient features were achieved, including ultra-low half-select leakage (<0.1 pA), very high nonlinearity (>10(3)), low operation current (nA level), self-compliance, high endurance (>10(7)), and robust read/write disturbance immunity.