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dc.contributor.authorHuang, Cheng-Haoen_US
dc.contributor.authorLi, Yimingen_US
dc.date.accessioned2017-04-21T06:48:35Z-
dc.date.available2017-04-21T06:48:35Z-
dc.date.issued2015en_US
dc.identifier.isbn978-1-4673-7860-4en_US
dc.identifier.issn1946-1569en_US
dc.identifier.urihttp://hdl.handle.net/11536/136055-
dc.description.abstractIn this work, we study the impact of channel fin width (W-fin) and fin height (H-fin) on III-V multiple-gate metal-oxide-semiconductor field-effect transistors (MOSFETs). We numerically simulated the output and transfer characteristics and the short-channel effect (SCE) of 14-nm InGaAs triple-gate MOSFETs by using an experimentally validated simulation. The engineering findings of this study indicate that devices with W-fin = 10 nm and H-fin between 14 and 21 nm possess optimal characteristic owing to a tradeoff between the drain-induced barrier lowing and subthreshld property. The effects of channel resistance, effective width, and quantum confinement resulting from the H-fin-dependent small energy band gap channel film on device characteristic are further estimated and discussed.en_US
dc.language.isoen_USen_US
dc.subjectIII-Ven_US
dc.subjectInGaAsen_US
dc.subjectmultiple-gateen_US
dc.subjectfin width (W-fin)en_US
dc.subjectfin height (H-fin)en_US
dc.subjectmetal-oxide-semiconductor field-effect transistor (MOSFET)en_US
dc.subjectquantum confinementen_US
dc.subjectshort-channel effects (SCEs)en_US
dc.titleElectrical Characteristic of InGaAs Multiple-Gate MOSFET Devicesen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)en_US
dc.citation.spage357en_US
dc.citation.epage360en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.department傳播研究所zh_TW
dc.contributor.department電機學院zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.contributor.departmentInstitute of Communication Studiesen_US
dc.contributor.departmentCollege of Electrical and Computer Engineeringen_US
dc.identifier.wosnumberWOS:000380542400090en_US
dc.citation.woscount0en_US
Appears in Collections:Conferences Paper