標題: Electrical Characteristic of InGaAs Multiple-Gate MOSFET Devices
作者: Huang, Cheng-Hao
Li, Yiming
交大名義發表
傳播研究所
電機學院
National Chiao Tung University
Institute of Communication Studies
College of Electrical and Computer Engineering
關鍵字: III-V;InGaAs;multiple-gate;fin width (W-fin);fin height (H-fin);metal-oxide-semiconductor field-effect transistor (MOSFET);quantum confinement;short-channel effects (SCEs)
公開日期: 2015
摘要: In this work, we study the impact of channel fin width (W-fin) and fin height (H-fin) on III-V multiple-gate metal-oxide-semiconductor field-effect transistors (MOSFETs). We numerically simulated the output and transfer characteristics and the short-channel effect (SCE) of 14-nm InGaAs triple-gate MOSFETs by using an experimentally validated simulation. The engineering findings of this study indicate that devices with W-fin = 10 nm and H-fin between 14 and 21 nm possess optimal characteristic owing to a tradeoff between the drain-induced barrier lowing and subthreshld property. The effects of channel resistance, effective width, and quantum confinement resulting from the H-fin-dependent small energy band gap channel film on device characteristic are further estimated and discussed.
URI: http://hdl.handle.net/11536/136055
ISBN: 978-1-4673-7860-4
ISSN: 1946-1569
期刊: 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
起始頁: 357
結束頁: 360
Appears in Collections:Conferences Paper