完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Chen, Bai-Ci | en_US |
dc.contributor.author | Wu, Yu-Chang | en_US |
dc.contributor.author | Huang, Jen-Hung | en_US |
dc.contributor.author | Kuo, Hao-Chung | en_US |
dc.contributor.author | Lin, Chien-Chung | en_US |
dc.date.accessioned | 2017-04-21T06:48:34Z | - |
dc.date.available | 2017-04-21T06:48:34Z | - |
dc.date.issued | 2015 | en_US |
dc.identifier.isbn | 978-1-4799-4208-4 | en_US |
dc.identifier.issn | 2378-8593 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/136057 | - |
dc.description.abstract | In this paper, we designed the grating with different periodicities on silicon. Aluminum or silicon dioxide would be filled in the inter-space of grating. Besides, the surface reflectivity of different structures was measured and the theoretical calculation was performed. By oxygen plasma-enhanced process, we successfully present the results of a low-temperature process for direct bonding of InP epitaxial layers on a silicon wafer. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | Wafer bonding | en_US |
dc.subject | Surface reflectivity | en_US |
dc.subject | Grating | en_US |
dc.subject | FDTD simulation | en_US |
dc.title | Low-Temperature Direct Wafer Bonding for III-V Compound Semiconductors to Nanometer-scale Grating Arrays | en_US |
dc.type | Proceedings Paper | en_US |
dc.identifier.journal | 2015 International Symposium on Next-Generation Electronics (ISNE) | en_US |
dc.contributor.department | 光電系統研究所 | zh_TW |
dc.contributor.department | 影像與生醫光電研究所 | zh_TW |
dc.contributor.department | 光電工程學系 | zh_TW |
dc.contributor.department | Institute of Photonic System | en_US |
dc.contributor.department | Institute of Imaging and Biomedical Photonics | en_US |
dc.contributor.department | Department of Photonics | en_US |
dc.identifier.wosnumber | WOS:000380530500096 | en_US |
dc.citation.woscount | 0 | en_US |
顯示於類別: | 會議論文 |