Low-Temperature Direct Wafer Bonding for III-V Compound Semiconductors to Nanometer-scale Grating Arrays

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Chen, Bai-Ci	en_US
dc.contributor.author	Wu, Yu-Chang	en_US
dc.contributor.author	Huang, Jen-Hung	en_US
dc.contributor.author	Kuo, Hao-Chung	en_US
dc.contributor.author	Lin, Chien-Chung	en_US
dc.date.accessioned	2017-04-21T06:48:34Z	-
dc.date.available	2017-04-21T06:48:34Z	-
dc.date.issued	2015	en_US
dc.identifier.isbn	978-1-4799-4208-4	en_US
dc.identifier.issn	2378-8593	en_US
dc.identifier.uri	http://hdl.handle.net/11536/136057	-
dc.description.abstract	In this paper, we designed the grating with different periodicities on silicon. Aluminum or silicon dioxide would be filled in the inter-space of grating. Besides, the surface reflectivity of different structures was measured and the theoretical calculation was performed. By oxygen plasma-enhanced process, we successfully present the results of a low-temperature process for direct bonding of InP epitaxial layers on a silicon wafer.	en_US
dc.language.iso	en_US	en_US
dc.subject	Wafer bonding	en_US
dc.subject	Surface reflectivity	en_US
dc.subject	Grating	en_US
dc.subject	FDTD simulation	en_US
dc.title	Low-Temperature Direct Wafer Bonding for III-V Compound Semiconductors to Nanometer-scale Grating Arrays	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2015 International Symposium on Next-Generation Electronics (ISNE)	en_US
dc.contributor.department	光電系統研究所	zh_TW
dc.contributor.department	影像與生醫光電研究所	zh_TW
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Institute of Photonic System	en_US
dc.contributor.department	Institute of Imaging and Biomedical Photonics	en_US
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000380530500096	en_US
dc.citation.woscount	0	en_US
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