Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Zhong, C. W. | en_US |
dc.contributor.author | Tsai, H. Y. | en_US |
dc.contributor.author | Lin, H. C. | en_US |
dc.contributor.author | Liu, K. C. | en_US |
dc.contributor.author | Huang, T. Y. | en_US |
dc.date.accessioned | 2017-04-21T06:49:47Z | - |
dc.date.available | 2017-04-21T06:49:47Z | - |
dc.date.issued | 2015 | en_US |
dc.identifier.isbn | 978-1-4799-9928-6 | en_US |
dc.identifier.issn | 1946-1550 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/136098 | - |
dc.description.abstract | High performance p-type SnO TFTs were fabricated and characterized in this work. Owing to thermal oxygen annealing process, the originally tin-rich oxide film was transformed into a polycrystalline SnO, resulting in decent field-effect mobility and high on/off current ratio. Electrical stability was evaluated by examining the threshold voltage shift under negative bias stresses at different stress times. A scenario considering the passivation/de-passivation of acceptor defects in the channel and the hole trapping of the gate oxide is proposed to explain the observed instability of the SnO TFTs. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Stability of High Performance p-type SnO TFTs | en_US |
dc.type | Proceedings Paper | en_US |
dc.identifier.journal | PROCEEDINGS OF THE 22ND INTERNATIONAL SYMPOSIUM ON THE PHYSICAL AND FAILURE ANALYSIS OF INTEGRATED CIRCUITS (IPFA 2015) | en_US |
dc.citation.spage | 84 | en_US |
dc.citation.epage | 87 | en_US |
dc.contributor.department | 電機學院 | zh_TW |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | College of Electrical and Computer Engineering | en_US |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000380466200024 | en_US |
dc.citation.woscount | 0 | en_US |
Appears in Collections: | Conferences Paper |