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dc.contributor.authorHuang, SYen_US
dc.contributor.authorChen, KMen_US
dc.contributor.authorHuang, GWen_US
dc.contributor.authorLiang, Ven_US
dc.contributor.authorTseng, HCen_US
dc.contributor.authorHsu, TLen_US
dc.contributor.authorChang, CYen_US
dc.date.accessioned2014-12-08T15:18:55Z-
dc.date.available2014-12-08T15:18:55Z-
dc.date.issued2005-06-01en_US
dc.identifier.issn1530-4388en_US
dc.identifier.urihttp://dx.doi.org/10.1109/TDMR.2005.846829en_US
dc.identifier.urihttp://hdl.handle.net/11536/13609-
dc.description.abstractHot-carrier (HC) effects on high-frequency and RF power characteristics of Si/SiGe HBTs are investigated in this paper. By using the two-tone load-pull measurement, we find that not only the cutoff frequency, but also the output power performances of Si/SiGe HBTs are suffered by the HC stress. In this work, S-parameters and intrinsic elements of an equivalent hybrid-pi model were used to validate the HC effects on high-frequency characteristics. With different bias conditions, the degradations of cutoff frequency, power gain, and linearity are found to be worse under constant base-current measurement than that under constant collector-current measurement. The HC-induced degradations on the current gain, transconductance, and ideality-factor of base and collector currents are analyzed to explain the experimental observations.en_US
dc.language.isoen_USen_US
dc.subjectcut-off frequencyen_US
dc.subjecthot-carrier effecten_US
dc.subjectlinearityen_US
dc.subjectpower gainen_US
dc.subjectpower-added efficiencyen_US
dc.subjectSiGeHBTen_US
dc.titleHot-carrier induced degradations on RF power characteristics of SiGe heterojunction bipolar transistorsen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1109/TDMR.2005.846829en_US
dc.identifier.journalIEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITYen_US
dc.citation.volume5en_US
dc.citation.issue2en_US
dc.citation.spage183en_US
dc.citation.epage189en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000230223000004-
Appears in Collections:Conferences Paper


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