Stability of InGaZnO Thin-Film Transistors with Durimide Passivation

Abstract

In this work, we investigate the effectiveness of three organic and inorganic materials as the passivation layers in improving the stability of the a-IGZO devices. Two types of organic materials, FH6400 and Durimide 115A, and inorganic PECVD-SiOX were explored in this work. Because of the effective protection from the diffusion of the gas molecules, especially the oxygen molecules, to the active layer, a-IGZO TFTs with the capping of organic passivation layer show good stability under positive bias stress and also show better stability under light illumination with negative bias stress due to low hydrogen content.