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dc.contributor.authorShie, Bo-Shiuanen_US
dc.contributor.authorChang, Chih-Binen_US
dc.contributor.authorChang, Hao-Chunen_US
dc.contributor.authorLin, Horng-Chihen_US
dc.contributor.authorHuang, Tiao-Yuanen_US
dc.date.accessioned2017-04-21T06:49:47Z-
dc.date.available2017-04-21T06:49:47Z-
dc.date.issued2015en_US
dc.identifier.isbn978-1-4799-9928-6en_US
dc.identifier.issn1946-1550en_US
dc.identifier.urihttp://hdl.handle.net/11536/136104-
dc.description.abstractIn this work, we investigate the effectiveness of three organic and inorganic materials as the passivation layers in improving the stability of the a-IGZO devices. Two types of organic materials, FH6400 and Durimide 115A, and inorganic PECVD-SiOX were explored in this work. Because of the effective protection from the diffusion of the gas molecules, especially the oxygen molecules, to the active layer, a-IGZO TFTs with the capping of organic passivation layer show good stability under positive bias stress and also show better stability under light illumination with negative bias stress due to low hydrogen content.en_US
dc.language.isoen_USen_US
dc.titleStability of InGaZnO Thin-Film Transistors with Durimide Passivationen_US
dc.typeProceedings Paperen_US
dc.identifier.journalPROCEEDINGS OF THE 22ND INTERNATIONAL SYMPOSIUM ON THE PHYSICAL AND FAILURE ANALYSIS OF INTEGRATED CIRCUITS (IPFA 2015)en_US
dc.citation.spage370en_US
dc.citation.epage373en_US
dc.contributor.department電機學院zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentCollege of Electrical and Computer Engineeringen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000380466200094en_US
dc.citation.woscount0en_US
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