An Au-free GaN High Electron Mobility Transistor with Ti/Al/W Ohmic Metal Structure

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DC 欄位	值	語言
dc.contributor.author	Yao, Jing-Neng	en_US
dc.contributor.author	Lin, Yueh-Chin	en_US
dc.contributor.author	Chuang, Yu-Lin	en_US
dc.contributor.author	Huang, Yu-Xiang	en_US
dc.contributor.author	Shih, Wang-Cheng	en_US
dc.contributor.author	Sze, Simon M.	en_US
dc.contributor.author	Chang, Edward Yi	en_US
dc.date.accessioned	2017-04-21T06:49:50Z	-
dc.date.available	2017-04-21T06:49:50Z	-
dc.date.issued	2015	en_US
dc.identifier.isbn	978-1-4799-9928-6	en_US
dc.identifier.issn	1946-1550	en_US
dc.identifier.uri	http://hdl.handle.net/11536/136108	-
dc.description.abstract	We demonstrate the Au-free GaN HEMT device with the Ti/Al/W Ohmic metal structure. Excellent surface roughness 4.88nm for Ti/Al/W Ohmic stucture was achieved after metallization. The DC characteristics is comparable with conventional HEMTs and the stress performance with high voltage is better than conventional HEMTs.	en_US
dc.language.iso	en_US	en_US
dc.title	An Au-free GaN High Electron Mobility Transistor with Ti/Al/W Ohmic Metal Structure	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	PROCEEDINGS OF THE 22ND INTERNATIONAL SYMPOSIUM ON THE PHYSICAL AND FAILURE ANALYSIS OF INTEGRATED CIRCUITS (IPFA 2015)	en_US
dc.citation.spage	394	en_US
dc.citation.epage	397	en_US
dc.contributor.department	材料科學與工程學系	zh_TW
dc.contributor.department	光電系統研究所	zh_TW
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Materials Science and Engineering	en_US
dc.contributor.department	Institute of Photonic System	en_US
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000380466200100	en_US
dc.citation.woscount	0	en_US
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