Factors Affecting Hysteresis in the Transfer Curves of a-IGZO TFTs under Illumination and Raised Temperature

Abstract

For different environments of illumination and temperature, we investigate the hysteresis in the transfer characteristic of a-IGZO TFT by controlling the sweep speed of the gate voltage. The hysteresis can be affected by the response time for the transition of oxygen vacancies states to the ionized states and its amount.