Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lai, Chih-Wei | en_US |
dc.contributor.author | Chen, Wei-Cheng | en_US |
dc.contributor.author | Yan, Tzu-Chao | en_US |
dc.contributor.author | Li, Chun-Hsing | en_US |
dc.contributor.author | Kuo, Chien-Nan | en_US |
dc.date.accessioned | 2017-04-21T06:49:49Z | - |
dc.date.available | 2017-04-21T06:49:49Z | - |
dc.date.issued | 2014 | en_US |
dc.identifier.isbn | 978-4-9023-3931-4 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/136122 | - |
dc.description.abstract | In this study, four different types of power detectors are implemented in 0.18 mu m CMOS technology for the THz image sensor application. These power detectors include common-source with and without supply voltage, and common gate with and without supply voltage. The measured responsivities at 332 GHz are 632 kV/W, 13.2 kV/W, 16.2 kV/W, and 9.1 kV/W, respectively. The image resolution of the proposed THz sensor is 2 mm. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | TIIz image | en_US |
dc.subject | power detector | en_US |
dc.subject | CMOS | en_US |
dc.subject | responsivity | en_US |
dc.title | The Experimental Study of THz Image Sensor in 0.18 mu m CMOS Technology | en_US |
dc.type | Proceedings Paper | en_US |
dc.identifier.journal | 2014 ASIA-PACIFIC MICROWAVE CONFERENCE (APMC) | en_US |
dc.citation.spage | 148 | en_US |
dc.citation.epage | 150 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000380417700404 | en_US |
dc.citation.woscount | 0 | en_US |
Appears in Collections: | Conferences Paper |