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dc.contributor.authorHsiao, Yu-Chihen_US
dc.contributor.authorMeng, Chinchunen_US
dc.contributor.authorWang, Ta-Weien_US
dc.contributor.authorHuang, Guo-Weien_US
dc.date.accessioned2017-04-21T06:49:49Z-
dc.date.available2017-04-21T06:49:49Z-
dc.date.issued2014en_US
dc.identifier.isbn978-4-9023-3931-4en_US
dc.identifier.urihttp://hdl.handle.net/11536/136126-
dc.description.abstractA 60-GHz dual conversion down-converter based on n-type Silicon-based Schottky diodes has been demonstrated in the low-cost 0.18-mu m CMOS technology. Four Schottky diodes in the ring shape configuration with two Marchand Baluns are used for the RF mixer while a double-balanced resistive mixer is used as the second down-converted IF mixer. As a result, the 60-GHz dual-conversion down-converter has conversion gain around 6 dB and noise figure around 18 dB in the RF frequency range of 57 similar to 64 GHz. The total power consumption is 32.8 mW at 2.5 V.en_US
dc.language.isoen_USen_US
dc.subjectSchottky diodeen_US
dc.subjectdual-conversion down-converteren_US
dc.subjectring mixeren_US
dc.title60-GHz 0.18-mu m CMOS Schottky-Diode Ring-Mixer Down-Converteren_US
dc.typeProceedings Paperen_US
dc.identifier.journal2014 ASIA-PACIFIC MICROWAVE CONFERENCE (APMC)en_US
dc.citation.spage1202en_US
dc.citation.epage1204en_US
dc.contributor.department電機學院zh_TW
dc.contributor.departmentCollege of Electrical and Computer Engineeringen_US
dc.identifier.wosnumberWOS:000380417700039en_US
dc.citation.woscount1en_US
Appears in Collections:Conferences Paper


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