60-GHz 0.18-mu m CMOS Schottky-Diode Ring-Mixer Down-Converter

Abstract

A 60-GHz dual conversion down-converter based on n-type Silicon-based Schottky diodes has been demonstrated in the low-cost 0.18-mu m CMOS technology. Four Schottky diodes in the ring shape configuration with two Marchand Baluns are used for the RF mixer while a double-balanced resistive mixer is used as the second down-converted IF mixer. As a result, the 60-GHz dual-conversion down-converter has conversion gain around 6 dB and noise figure around 18 dB in the RF frequency range of 57 similar to 64 GHz. The total power consumption is 32.8 mW at 2.5 V.