60-GHz 0.18-mu m CMOS Schottky-Diode Ring-Mixer Down-Converter

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Hsiao, Yu-Chih	en_US
dc.contributor.author	Meng, Chinchun	en_US
dc.contributor.author	Wang, Ta-Wei	en_US
dc.contributor.author	Huang, Guo-Wei	en_US
dc.date.accessioned	2017-04-21T06:49:49Z	-
dc.date.available	2017-04-21T06:49:49Z	-
dc.date.issued	2014	en_US
dc.identifier.isbn	978-4-9023-3931-4	en_US
dc.identifier.uri	http://hdl.handle.net/11536/136126	-
dc.description.abstract	A 60-GHz dual conversion down-converter based on n-type Silicon-based Schottky diodes has been demonstrated in the low-cost 0.18-mu m CMOS technology. Four Schottky diodes in the ring shape configuration with two Marchand Baluns are used for the RF mixer while a double-balanced resistive mixer is used as the second down-converted IF mixer. As a result, the 60-GHz dual-conversion down-converter has conversion gain around 6 dB and noise figure around 18 dB in the RF frequency range of 57 similar to 64 GHz. The total power consumption is 32.8 mW at 2.5 V.	en_US
dc.language.iso	en_US	en_US
dc.subject	Schottky diode	en_US
dc.subject	dual-conversion down-converter	en_US
dc.subject	ring mixer	en_US
dc.title	60-GHz 0.18-mu m CMOS Schottky-Diode Ring-Mixer Down-Converter	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2014 ASIA-PACIFIC MICROWAVE CONFERENCE (APMC)	en_US
dc.citation.spage	1202	en_US
dc.citation.epage	1204	en_US
dc.contributor.department	電機學院	zh_TW
dc.contributor.department	College of Electrical and Computer Engineering	en_US
dc.identifier.wosnumber	WOS:000380417700039	en_US
dc.citation.woscount	1	en_US
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