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dc.contributor.authorCheng, Stoneen_US
dc.contributor.authorWang, Chieh-Anen_US
dc.contributor.authorChou, Po-Chienen_US
dc.contributor.authorChieng, Wei-Huaen_US
dc.contributor.authorChang, Edward Yien_US
dc.date.accessioned2017-04-21T06:50:01Z-
dc.date.available2017-04-21T06:50:01Z-
dc.date.issued2013en_US
dc.identifier.isbn978-1-4673-2523-3en_US
dc.identifier.urihttp://hdl.handle.net/11536/136155-
dc.description.abstractThis paper presents a 270-V, 56-A GaN power module with three AlN substrates are prepared for the module. Each substrate is composed of three parallel connected GaN chips which incorporates six 2-A AlGaN/GaN-on-Si high electron mobility transistors (HEMTs) cells. The substrate layout inside the module is designed to reduce package parasitic. The devices are wire-bonded in parallel connection to increase the power rating. The packaged GaN HEMTs exhibit the pulsed drain current of 0.435 A/mm. Both DC and pulsed current-voltage (ID-VDS) characteristics are measured for different connection and sizes of devices, at various of power densities, pulse lengths, and duty factors. The other static parameters like threshold voltage and leakage currents were extracted to show how these parameters would scale as the devices are paralleled. Performance of multiple chip GaN power module package is studied. Experimental results demonstrated the ability to parallel nine GaN HEMTs die together and to verify the current sharing during the dynamic switching to attain high-current capacities.en_US
dc.language.isoen_USen_US
dc.subjectGaN HEMTsen_US
dc.subjectpower moduleen_US
dc.subjectpower managementen_US
dc.subjectcurrent charingen_US
dc.titleAll GaN-on-Si High Power Module Design and Performance Evaluationen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2013 IEEE INTERNATIONAL CONFERENCE OF ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC)en_US
dc.contributor.department機械工程學系zh_TW
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Mechanical Engineeringen_US
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000380585600120en_US
dc.citation.woscount0en_US
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