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dc.contributor.authorKer, Ming-Douen_US
dc.contributor.authorLin, Chun-Yuen_US
dc.date.accessioned2017-04-21T06:50:00Z-
dc.date.available2017-04-21T06:50:00Z-
dc.date.issued2013en_US
dc.identifier.isbn978-1-4673-2523-3en_US
dc.identifier.urihttp://hdl.handle.net/11536/136160-
dc.description.abstractCMOS technology has been used to implement the radio and wireless integrated circuits. However, the thinner gate oxide in nanoscale CMOS technology seriously degrades the electrostatic discharge (ESD) robustness. Therefore, on-chip ESD protection designs must be added at all input/output pads in CMOS chip. To minimize the impacts from ESD protection design on circuit performances, ESD protection at input/output pads must be carefully designed. A review on ESD protection designs with low parasitic capacitance for radio and wireless applications is presented in this paper. The comparisons among these ESD protection designs are also discussed.en_US
dc.language.isoen_USen_US
dc.subjectElectrostatic discharge (ESD)en_US
dc.subjectlow capacitanceen_US
dc.subjectradio-frequency (RF)en_US
dc.titleOn-Chip ESD Protection Designs in RF Integrated Circuits for Radio and Wireless Applicationsen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2013 IEEE INTERNATIONAL CONFERENCE OF ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC)en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000380585600136en_US
dc.citation.woscount0en_US
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