SCR Device for On-Chip ESD Protection in RF Power Amplifier

Full metadata record

DC Field	Value	Language
dc.contributor.author	Lin, Chun-Yu	en_US
dc.contributor.author	Ker, Ming-Dou	en_US
dc.date.accessioned	2017-04-21T06:50:00Z	-
dc.date.available	2017-04-21T06:50:00Z	-
dc.date.issued	2013	en_US
dc.identifier.isbn	978-1-4673-2523-3	en_US
dc.identifier.uri	http://hdl.handle.net/11536/136161	-
dc.description.abstract	To protect a radio-frequency (RF) power amplifier from electrostatic discharge (ESD) damages, a lowcapacitance, high-robust, and good-latch up-immune ESD protection device was proposed in this work. T he proposed design has been realized in a compact structure in a 65-nm CMOS process. Experimental results of the test devices have been successfully verified, including RF performances, I-V characteristics, and ESD robustness.	en_US
dc.language.iso	en_US	en_US
dc.subject	Electrostatic discharge (ESD)	en_US
dc.subject	power amplifier (PA)	en_US
dc.subject	radio-frequency (RF)	en_US
dc.subject	silicon-controlled rectifier (SCR)	en_US
dc.title	SCR Device for On-Chip ESD Protection in RF Power Amplifier	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2013 IEEE INTERNATIONAL CONFERENCE OF ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC)	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000380585600094	en_US
dc.citation.woscount	0	en_US
Appears in Collections:	Conferences Paper