完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Lin, Chun-Yu | en_US |
dc.contributor.author | Ker, Ming-Dou | en_US |
dc.date.accessioned | 2017-04-21T06:50:00Z | - |
dc.date.available | 2017-04-21T06:50:00Z | - |
dc.date.issued | 2013 | en_US |
dc.identifier.isbn | 978-1-4673-2523-3 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/136161 | - |
dc.description.abstract | To protect a radio-frequency (RF) power amplifier from electrostatic discharge (ESD) damages, a lowcapacitance, high-robust, and good-latch up-immune ESD protection device was proposed in this work. T he proposed design has been realized in a compact structure in a 65-nm CMOS process. Experimental results of the test devices have been successfully verified, including RF performances, I-V characteristics, and ESD robustness. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | Electrostatic discharge (ESD) | en_US |
dc.subject | power amplifier (PA) | en_US |
dc.subject | radio-frequency (RF) | en_US |
dc.subject | silicon-controlled rectifier (SCR) | en_US |
dc.title | SCR Device for On-Chip ESD Protection in RF Power Amplifier | en_US |
dc.type | Proceedings Paper | en_US |
dc.identifier.journal | 2013 IEEE INTERNATIONAL CONFERENCE OF ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC) | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000380585600094 | en_US |
dc.citation.woscount | 0 | en_US |
顯示於類別: | 會議論文 |