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dc.contributor.authorLin, Chun-Yuen_US
dc.contributor.authorKer, Ming-Douen_US
dc.date.accessioned2017-04-21T06:50:00Z-
dc.date.available2017-04-21T06:50:00Z-
dc.date.issued2013en_US
dc.identifier.isbn978-1-4673-2523-3en_US
dc.identifier.urihttp://hdl.handle.net/11536/136161-
dc.description.abstractTo protect a radio-frequency (RF) power amplifier from electrostatic discharge (ESD) damages, a lowcapacitance, high-robust, and good-latch up-immune ESD protection device was proposed in this work. T he proposed design has been realized in a compact structure in a 65-nm CMOS process. Experimental results of the test devices have been successfully verified, including RF performances, I-V characteristics, and ESD robustness.en_US
dc.language.isoen_USen_US
dc.subjectElectrostatic discharge (ESD)en_US
dc.subjectpower amplifier (PA)en_US
dc.subjectradio-frequency (RF)en_US
dc.subjectsilicon-controlled rectifier (SCR)en_US
dc.titleSCR Device for On-Chip ESD Protection in RF Power Amplifieren_US
dc.typeProceedings Paperen_US
dc.identifier.journal2013 IEEE INTERNATIONAL CONFERENCE OF ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC)en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000380585600094en_US
dc.citation.woscount0en_US
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