Low Efficiency Droop Green Nano-Pyramid {10(1)over-bar1} InGaN/GaN Multiple Quantum Well LED

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DC 欄位	值	語言
dc.contributor.author	Chang, Shih-Pang	en_US
dc.contributor.author	Xiong, Kang-lin	en_US
dc.contributor.author	Lin, Da-Wei	en_US
dc.contributor.author	Cheng, Yuh-Jen	en_US
dc.contributor.author	Han, Jung	en_US
dc.contributor.author	Kuo, Hao-Chung	en_US
dc.contributor.author	Chang, Chun-Yen	en_US
dc.date.accessioned	2017-04-21T06:49:14Z	-
dc.date.available	2017-04-21T06:49:14Z	-
dc.date.issued	2014	en_US
dc.identifier.issn	2160-9020	en_US
dc.identifier.uri	http://hdl.handle.net/11536/136173	-
dc.description.abstract	We report a low efficiency droop 520 nm green nano-pyramid InGaN/GaN multiple quantum well (MQW) LED. MQWs were grown on the semipolar {10 (1) over bar1} nano-pyramid facets. The device physics will be discussed in details.	en_US
dc.language.iso	en_US	en_US
dc.title	Low Efficiency Droop Green Nano-Pyramid {10(1)over-bar1} InGaN/GaN Multiple Quantum Well LED	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2014 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO)	en_US
dc.contributor.department	電機學院	zh_TW
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	College of Electrical and Computer Engineering	en_US
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000369908601343	en_US
dc.citation.woscount	0	en_US
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