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dc.contributor.authorYu, Chang-Hungen_US
dc.contributor.authorSu, Pinen_US
dc.date.accessioned2017-04-21T06:49:30Z-
dc.date.available2017-04-21T06:49:30Z-
dc.date.issued2015en_US
dc.identifier.isbn978-1-4673-8155-0en_US
dc.identifier.urihttp://hdl.handle.net/11536/136214-
dc.description.abstractThe intrinsic drain-induced-barrier-lowering (DIBL) characteristics of ultra-thin-body (UTB) MOSFETs with various III-V channel materials (such as GaAs, In0.53Ga0.47As, In0.7Ga0.3As, InAs, In0.2Ga0.8Sb, InSb, etc.) has been investigated and benchmarked with the Si device. Our results indicate that the DIBL of the III-V-on-insulator devices can be worse than what permittivity predicts. The underlying mechanism is proposed. We also show that, with the aid of quantum confinement (along the channel-thickness direction), the DIBL of the III-V devices can be comparable to the Si device.en_US
dc.language.isoen_USen_US
dc.subjectultra-thin-body (UTB) structureen_US
dc.subjectIII-Ven_US
dc.subjectdrain-induced-barrier-lowering (DIBL)en_US
dc.subjectquantum confinementen_US
dc.titleInvestigation and Benchmark of Intrinsic Drain-Induced-Barrier-Lowering (DIBL) for Ultra-Thin-Body III-V-on-Insulator n-MOSFETsen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2015 IEEE 15TH INTERNATIONAL CONFERENCE ON NANOTECHNOLOGY (IEEE-NANO)en_US
dc.citation.spage666en_US
dc.citation.epage669en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000380515200073en_US
dc.citation.woscount0en_US
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