Enhancement on Photovoltaic Properties of Boron-doped Super-high Density Si Quantum Dot Thin Film

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Huang, Pin-Ruei	en_US
dc.contributor.author	Chen, You-Jeng	en_US
dc.contributor.author	Chang, Jia-Ruei	en_US
dc.contributor.author	Kuo, Kuang-Yang	en_US
dc.contributor.author	Lee, Po-Tsung	en_US
dc.date.accessioned	2017-04-21T06:49:14Z	-
dc.date.available	2017-04-21T06:49:14Z	-
dc.date.issued	2014	en_US
dc.identifier.issn	2160-9020	en_US
dc.identifier.uri	http://hdl.handle.net/11536/136229	-
dc.description.abstract	Boron-doped super-high density nano-crystalline Si quantum dot thin film is demonstrated by utilizing a gradient Si-rich oxide multilayer structure. The boron doping effect and its significant influence on photovoltaic properties are observed and discussed.	en_US
dc.language.iso	en_US	en_US
dc.title	Enhancement on Photovoltaic Properties of Boron-doped Super-high Density Si Quantum Dot Thin Film	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2014 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO)	en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000369908601163	en_US
dc.citation.woscount	0	en_US
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