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dc.contributor.authorLiu, Che Chunen_US
dc.contributor.authorLee, Ming Lingen_US
dc.contributor.authorChang, Kow Mingen_US
dc.contributor.authorChang, Shan Weien_US
dc.contributor.authorChen, Hsiangen_US
dc.contributor.authorKao, Chyuan Hauren_US
dc.contributor.authorSung, Wei Kungen_US
dc.contributor.authorKuo, Min Hauen_US
dc.contributor.authorChang, Che Weien_US
dc.contributor.authorChang, Chia Lunen_US
dc.contributor.authorLin, Chun Fuen_US
dc.date.accessioned2017-04-21T06:49:28Z-
dc.date.available2017-04-21T06:49:28Z-
dc.date.issued2014en_US
dc.identifier.isbn978-1-4799-3282-5en_US
dc.identifier.urihttp://hdl.handle.net/11536/136234-
dc.description.abstractIn the paper, the EIS structure with high-k CeO2 sensing film has more responsive to H+ relative to Na+ and K+. The CeO2 sensing membrane annealed with O-2 at 800 degrees C shows a higher sensitivity of 58.76 mV/pH, higher linearity, lower hysteresis voltage of 5.97 mV and lower drift rate of 0.96 mV/hr than the other conditions.en_US
dc.language.isoen_USen_US
dc.titleThe CeO2 Sensing Membrane in Electrolyte-Insulator-Semiconductor for Bio-Sensor Applicationsen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2014 12TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT)en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000380478500482en_US
dc.citation.woscount0en_US
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