標題: On Characteristic Fluctuation of Nonideal Bulk FinFET Devices
作者: Li, Yiming
Huang, Wen-Tsung
交大名義發表
傳播研究所
電機學院
National Chiao Tung University
Institute of Communication Studies
College of Electrical and Computer Engineering
關鍵字: Random Dopant Fluctuation;Nonideal Channel Fin;Bulk FinFET Devices;Threshold Voltage Fluctuation;Modeling and Simulation
公開日期: 2014
摘要: This work, for the first time, estimates the random dopant fluctuation (RDF) on DC characteristics of trapezoidal bulk FinFET devices by using an experimentally calibrated 3D quantum-mechanically corrected device simulation. For bulk FinFET devices under the same channel volume, we analyze the impact of geometry variation and RDF on the threshold voltage, the on-/off-state current with respect to different channel fin angles. The channel fin angle increases, the on-state current increases owing to increase of total fin width, but small-and large-fin-angle devices have comparable RDF. The threshold voltage is affected to different extents by RDs appearing in the upper and lower channel fin regions. Two major factors, the total fin width and the RD\'s position, affecting the Vth fluctuation of RDF are discussed.
URI: http://hdl.handle.net/11536/136241
ISBN: 978-1-4799-5038-6
ISSN: 2159-3523
期刊: 2014 IEEE INTERNATIONAL NANOELECTRONICS CONFERENCE (INEC)
Appears in Collections:Conferences Paper