1. You are Here：

Full metadata record
DC FieldValueLanguage
dc.contributor.authorLin, Da-Weien_US
dc.contributor.authorHuang, Jhih-Kaien_US
dc.contributor.authorLiu, Che-Yuen_US
dc.contributor.authorChang, Ruey-Wenen_US
dc.contributor.authorWang, Sheng-Wenen_US
dc.contributor.authorChi, Gou-Chungen_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.date.accessioned2017-04-21T06:49:14Z-
dc.date.available2017-04-21T06:49:14Z-
dc.date.issued2014en_US
dc.identifier.issn2160-9020en_US
dc.identifier.urihttp://hdl.handle.net/11536/136251-
dc.description.abstractHighly efficient InGaN-based LEDs with embedded sidewall passivation cubic airvoids made by nanoimprint lithography were demonstrated. The LEDs with embedded airvoids exhibit a 45% enhancement of light output at 20 mA compared with conventional LEDs.en_US
dc.language.isoen_USen_US
dc.titleHighly Efficient InGaN-based LED with Embedded Cubic Airvoidsen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2014 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO)en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000369908600016en_US
dc.citation.woscount0en_US
Appears in Collections:Conferences Paper


Related Contents
Loading...