Highly Efficient InGaN-based LED with Embedded Cubic Airvoids

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Lin, Da-Wei	en_US
dc.contributor.author	Huang, Jhih-Kai	en_US
dc.contributor.author	Liu, Che-Yu	en_US
dc.contributor.author	Chang, Ruey-Wen	en_US
dc.contributor.author	Wang, Sheng-Wen	en_US
dc.contributor.author	Chi, Gou-Chung	en_US
dc.contributor.author	Kuo, Hao-Chung	en_US
dc.date.accessioned	2017-04-21T06:49:14Z	-
dc.date.available	2017-04-21T06:49:14Z	-
dc.date.issued	2014	en_US
dc.identifier.issn	2160-9020	en_US
dc.identifier.uri	http://hdl.handle.net/11536/136251	-
dc.description.abstract	Highly efficient InGaN-based LEDs with embedded sidewall passivation cubic airvoids made by nanoimprint lithography were demonstrated. The LEDs with embedded airvoids exhibit a 45% enhancement of light output at 20 mA compared with conventional LEDs.	en_US
dc.language.iso	en_US	en_US
dc.title	Highly Efficient InGaN-based LED with Embedded Cubic Airvoids	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2014 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO)	en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000369908600016	en_US
dc.citation.woscount	0	en_US
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