完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Lin, PJ | en_US |
dc.contributor.author | Hsu, SY | en_US |
dc.date.accessioned | 2014-12-08T15:18:58Z | - |
dc.date.available | 2014-12-08T15:18:58Z | - |
dc.date.issued | 2005-06-01 | en_US |
dc.identifier.issn | 0577-9073 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/13626 | - |
dc.description.abstract | We have measured the upper critical field, H-c2(T), in granular SnGe samples with normal state resistivities, rho(N), that range from 0.3 m Omega cm to 0.5 Omega cm. The samples demonstrate an evolution from superconducting to insulating in transport with increasing disorder. The temperature dependence of H-c2 shows a clear change in curvature between high rho(N) and intermediate rho(N) samples differing from the experimental results by Deutscher et al.. Our data is analyzed in terms of Ginzburg-Landau theory and grain structure induced disorder effect. The result is similar to the observation in high T-c superconductors that anisotropy induced fluctuation effect play an important role. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Upper critical field of granular SnGe samples near the superconductor-to-insulator transition | en_US |
dc.type | Article; Proceedings Paper | en_US |
dc.identifier.journal | CHINESE JOURNAL OF PHYSICS | en_US |
dc.citation.volume | 43 | en_US |
dc.citation.issue | 3 | en_US |
dc.citation.spage | 662 | en_US |
dc.citation.epage | 665 | en_US |
dc.contributor.department | 電子物理學系 | zh_TW |
dc.contributor.department | Department of Electrophysics | en_US |
dc.identifier.wosnumber | WOS:000230159800023 | - |
顯示於類別: | 會議論文 |