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dc.contributor.authorLiu, Che-Yuen_US
dc.contributor.authorHuang, Jhih-Kaien_US
dc.contributor.authorLin, Da-Weien_US
dc.contributor.authorHuang, Hung-Wenen_US
dc.contributor.authorLee, Po-Tsungen_US
dc.contributor.authorChi, Gou-Chungen_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.contributor.authorChang, Chun-Yenen_US
dc.date.accessioned2017-04-21T06:49:14Z-
dc.date.available2017-04-21T06:49:14Z-
dc.date.issued2014en_US
dc.identifier.issn2160-9020en_US
dc.identifier.urihttp://hdl.handle.net/11536/136284-
dc.description.abstractWe demonstrated a high-power GaN-based light emitting diodes (LEDs) which have micro-hole array and nano-rods compound structure by nanoimprint lithography (NIL). The nanorods structure inside the micro-hole could efficiently guide the trapped light from the GaN epilayer. Therefore, the light output power of LED with micro-hole array and nanorods was as high as 1.27 times, as compared with standard LED.en_US
dc.language.isoen_USen_US
dc.titleHighly Efficient Light Extraction GaN-based Light Emitting Diode with Nano-rods in Micro-holes Compound Structureen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2014 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO)en_US
dc.contributor.department電機學院zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentCollege of Electrical and Computer Engineeringen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000369908600028en_US
dc.citation.woscount0en_US
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