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dc.contributor.authorChen, Yu-Jenen_US
dc.contributor.authorChung, Tien-Kanen_US
dc.contributor.authorLin, Po-Jungen_US
dc.contributor.authorHung, Chiao-Fangen_US
dc.contributor.authorChu, Hou-Jenen_US
dc.contributor.authorLin, Shin-Hungen_US
dc.contributor.authorCheng, Chih-Chengen_US
dc.date.accessioned2017-04-21T06:49:35Z-
dc.date.available2017-04-21T06:49:35Z-
dc.date.issued2016en_US
dc.identifier.isbn978-0-7918-4988-0en_US
dc.identifier.urihttp://hdl.handle.net/11536/136292-
dc.description.abstractIn this paper, we report an electrical control of magnetic multi-domain-walls transformation in an N-shape-patterned Ni nanostructures on a piezoelectric [Pb(Mg1/3Nb2/3)O-3](0.68)-[PbTiO3](0.32) substrate. Based on the converse-magnetoelectric-effect induced domain-wall transformation and the specific N-shape geometry guided domain-wall motion, the domain walls are successfully transformed by an applied electric field of 0.8 MV/m from the transverse domain wall state into the flux closure vortex domain state. These experimental results achieve the electrical control of multi-domain-walls transformation and would create more data storage and memory applications in the future.en_US
dc.language.isoen_USen_US
dc.titleELECTRICAL CONTROL OF MAGNETIC MULTI-DOMAIN TRANSFORMATION IN A SPECIFIC GEOMETRIC-PATTERNED NI NANOSTRUCTURE ON A PIEZOELECTRIC [PB(MG(1/3)NB(2/3))O3](0.68)-[PBTIO3](0.32) SUBSTRATEen_US
dc.typeProceedings Paperen_US
dc.identifier.journalPROCEEDINGS OF THE ASME CONFERENCE ON INFORMATION STORAGE AND PROCESSING SYSTEMS, 2016en_US
dc.contributor.department機械工程學系zh_TW
dc.contributor.department國際半導體學院zh_TW
dc.contributor.departmentDepartment of Mechanical Engineeringen_US
dc.contributor.departmentInternational College of Semiconductor Technologyen_US
dc.identifier.wosnumberWOS:000385997300045en_US
dc.citation.woscount0en_US
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