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dc.contributor.authorCheng, F. J.en_US
dc.contributor.authorLee, Y. C.en_US
dc.contributor.authorHu, S. Y.en_US
dc.contributor.authorLin, Y. C.en_US
dc.contributor.authorTiong, K. K.en_US
dc.contributor.authorChou, W. C.en_US
dc.date.accessioned2019-04-03T06:47:09Z-
dc.date.available2019-04-03T06:47:09Z-
dc.date.issued2016-01-01en_US
dc.identifier.issn1757-8981en_US
dc.identifier.urihttp://dx.doi.org/10.1088/1757-899X/131/1/012005en_US
dc.identifier.urihttp://hdl.handle.net/11536/136296-
dc.description.abstractIn this work, the carrier dynamics in Zn1-xCdxO thin films with different Cd contents grown by molecular beam epitaxy system have been investigated using photoluminescence and time-resolved photoluminescence measurements. The carrier lifetime can be estimated from the PL decay curve fitted by triple exponential function. The emission energy dependence and temperature dependence of the PL decay time indicate that carrier localization dominate the luminescence mechanism of the ZnCdO alloy semiconductor.en_US
dc.language.isoen_USen_US
dc.titleCarrier dynamics in ZnxCd1-xO films grown by molecular beam epitaxyen_US
dc.typeProceedings Paperen_US
dc.identifier.doi10.1088/1757-899X/131/1/012005en_US
dc.identifier.journal4TH INTERNATIONAL CONFERENCE ON MANUFACTURING, OPTIMIZATION, INDUSTRIAL AND MATERIAL ENGINEERING (MOIME 2016)en_US
dc.citation.volume131en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000383013000004en_US
dc.citation.woscount0en_US
Appears in Collections:Conferences Paper


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