Carrier dynamics in ZnxCd1-xO films grown by molecular beam epitaxy

doi:10.1088/1757-899X/131/1/012005

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Cheng, F. J.	en_US
dc.contributor.author	Lee, Y. C.	en_US
dc.contributor.author	Hu, S. Y.	en_US
dc.contributor.author	Lin, Y. C.	en_US
dc.contributor.author	Tiong, K. K.	en_US
dc.contributor.author	Chou, W. C.	en_US
dc.date.accessioned	2019-04-03T06:47:09Z	-
dc.date.available	2019-04-03T06:47:09Z	-
dc.date.issued	2016-01-01	en_US
dc.identifier.issn	1757-8981	en_US
dc.identifier.uri	http://dx.doi.org/10.1088/1757-899X/131/1/012005	en_US
dc.identifier.uri	http://hdl.handle.net/11536/136296	-
dc.description.abstract	In this work, the carrier dynamics in Zn1-xCdxO thin films with different Cd contents grown by molecular beam epitaxy system have been investigated using photoluminescence and time-resolved photoluminescence measurements. The carrier lifetime can be estimated from the PL decay curve fitted by triple exponential function. The emission energy dependence and temperature dependence of the PL decay time indicate that carrier localization dominate the luminescence mechanism of the ZnCdO alloy semiconductor.	en_US
dc.language.iso	en_US	en_US
dc.title	Carrier dynamics in ZnxCd1-xO films grown by molecular beam epitaxy	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.doi	10.1088/1757-899X/131/1/012005	en_US
dc.identifier.journal	4TH INTERNATIONAL CONFERENCE ON MANUFACTURING, OPTIMIZATION, INDUSTRIAL AND MATERIAL ENGINEERING (MOIME 2016)	en_US
dc.citation.volume	131	en_US
dc.citation.spage	0	en_US
dc.citation.epage	0	en_US
dc.contributor.department	電子物理學系	zh_TW
dc.contributor.department	Department of Electrophysics	en_US
dc.identifier.wosnumber	WOS:000383013000004	en_US
dc.citation.woscount	0	en_US
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