Ultralow leakage In0.53Ga0.47As p-i-n photodetector grown on linearly graded metamorphic InxGa1-xP buffered GaAs substrate

doi:10.1109/JQE.2005.847570

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DC 欄位	值	語言
dc.contributor.author	Lin, GR	en_US
dc.contributor.author	Kuo, HC	en_US
dc.contributor.author	Lin, CK	en_US
dc.contributor.author	Feng, M	en_US
dc.date.accessioned	2014-12-08T15:18:58Z	-
dc.date.available	2014-12-08T15:18:58Z	-
dc.date.issued	2005-06-01	en_US
dc.identifier.issn	0018-9197	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/JQE.2005.847570	en_US
dc.identifier.uri	http://hdl.handle.net/11536/13631	-
dc.description.abstract	A novel top-illuminated In-0.53 Ga-0.47 As p-i-n photodiodes (MM-PINPD) grown on GaAs substrate by using linearly graded metamorphic InxGa1-xP (x graded from 0.49 to 1) buffer layer is reported. The dark current, optical responsivities, noise equivalent power, and operational bandwidth of the MM-PINPD with aperture diameter of 60 mu m are 13 pA, 0.6 A/W, 3.4 x 10(-15) W/Hz(1/2), and 7.5 GHz, respectively, at 1550 nm. The performances of the MM-PINPD on GaAs are demonstrated to be comparable to those of a similar device made on InGaAs-InP substrate.	en_US
dc.language.iso	en_US	en_US
dc.subject	GaAs	en_US
dc.subject	InGaP	en_US
dc.subject	In0.53Ga0.47As	en_US
dc.subject	metamorphic	en_US
dc.subject	p-i-n photodetector	en_US
dc.title	Ultralow leakage In0.53Ga0.47As p-i-n photodetector grown on linearly graded metamorphic InxGa1-xP buffered GaAs substrate	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1109/JQE.2005.847570	en_US
dc.identifier.journal	IEEE JOURNAL OF QUANTUM ELECTRONICS	en_US
dc.citation.volume	41	en_US
dc.citation.issue	6	en_US
dc.citation.spage	749	en_US
dc.citation.epage	752	en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000229356600001	-
dc.citation.woscount	9	-
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