標題: Hybrid Si/TMD 2D Electronic Double Channels Fabricated Using Solid CVD Few-Layer-MoS2 Stacking for V-th Matching and CMOS-Compatible 3DFETs
作者: Chen, Min-Cheng
Lin, Chia-Yi
Li, Kai-Hsin
Li, Lain-Jong
Chen, Chang-Hsiao
Chuang, Cheng-Hao
Lee, Ming-Dao
Chen, Yi-Ju
Hou, Yun-Fang
Lin, Chang-Hsien
Chen, Chun-Chi
Wu, Bo-Wei
Wu, Cheng-San
Yang, Ivy
Lee, Yao-Jen
Yeh, Wen-Kuan
Wang, Tahui
Yang, Fu-Liang
Hu, Chenming
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2014
摘要: Stackable 3DFETs such as FinFET using hybrid Si/MoS 2 channels were developed using a fully CMOS-compatible process. Adding several molecular layers (3-16 layers) of the transition-metal dichalcogenide (TMD), MoS2 to Si fin and nanowire resulted in improved (+25%) I-on,I-n of the FinFET and nanowire FET (NWFET). The PFETs also operated effectively and the N/P device V-th are low and matched perfectly. The proposed heterogeneous Si/TMD 3DFETs can be useful in future electronics.
URI: http://hdl.handle.net/11536/136340
ISBN: 978-1-4799-8000-0
期刊: 2014 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)
Appears in Collections:Conferences Paper