標題: Cleaning methodology of small residue defect with surfactant in copper chemical mechanical polishing post-cleaning
作者: Wei, Kuo-Hsiu
Hung, Chi-Cheng
Wang, Yu-Sheng
Liu, Chuan-Pu
Chen, Kei-Wei
Wang, Ying-Lang
照明與能源光電研究所
Institute of Lighting and Energy Photonics
關鍵字: Abrasive;Copper;Chemical mechanical polishing;Post-cleaning;Tetramethylammonium hydroxide (TMAH);Citric acid;Perfiuorobutanesulfonic acid (PFBS)
公開日期: 1-十一月-2016
摘要: Advanced semiconductor manufacturing technology has adopted an alkaline solution for copper (Cu) corrosion prevention instead of the traditional acidic solution in the post-cleaning process of copper chemical mechanical polishing. Low particle and residue removal efficiency has been an issue for this process. In this study, we investigated the formation of small residue defects and the cleaning mechanism to remove these defects. The results show it is insufficient to remove the small residue defects by using the traditional process parameter tuning. Adding some friction between the pad and the wafer surface allowed the defects to be effectively reduced. (C) 2016 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.tsf.2016.05.007
http://hdl.handle.net/11536/136348
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2016.05.007
期刊: THIN SOLID FILMS
Volume: 618
起始頁: 77
結束頁: 80
顯示於類別:會議論文