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dc.contributor.authorYen, Tzu-Chunen_US
dc.contributor.authorHo, Yen-Tengen_US
dc.contributor.authorPeng, Chun-Yenen_US
dc.contributor.authorTian, Jr-Shengen_US
dc.contributor.authorShih, Yi-Senen_US
dc.contributor.authorWei, Lin-Lungen_US
dc.contributor.authorWang, Wei-Linen_US
dc.contributor.authorChiu, Kun-Anen_US
dc.contributor.authorChang, Lien_US
dc.date.accessioned2017-04-21T06:48:54Z-
dc.date.available2017-04-21T06:48:54Z-
dc.date.issued2016-11-01en_US
dc.identifier.issn0040-6090en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.tsf.2016.03.013en_US
dc.identifier.urihttp://hdl.handle.net/11536/136349-
dc.description.abstractAn unconventional non-polar (12 (3) over bar0)ZnO epitaxial film is grown on (118)LaAlO3(LAO) substrate by pulsed laser deposition. X-ray diffraction pole figures and transmission electron microscopy show that the crystal orientation relationships between non-polar (1230)ZnO and (118)LAO substrate are (0001)ZnO // (110)LAO and (1120)ZnO // (001)LAO. The Raman spectrum with a significant E2 peaked at 439 cm(-1) clearly indicates the formation of non-polar ZnO film. Photoluminescence measurement of the non-polar ZnO film shows a strong near band-edge emission located at 3.3 eV with negligible green-yellow emission. (C) 2016 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.titleSingle domain non-polar (12(3)over-bar0)ZnO epitaxy on (118)LaAlO3 by pulsed laser depositionen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1016/j.tsf.2016.03.013en_US
dc.identifier.journalTHIN SOLID FILMSen_US
dc.citation.volume618en_US
dc.citation.spage114en_US
dc.citation.epage117en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000389112000021en_US
dc.citation.woscount0en_US
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