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dc.contributor.authorTseng, Sheng-Cheen_US
dc.contributor.authorSyu, Jin-Siangen_US
dc.contributor.authorSu, Jen-Yien_US
dc.contributor.authorWei, Hung-Juen_US
dc.contributor.authorMeng, Chinchunen_US
dc.contributor.authorHuang, Guo-Weien_US
dc.date.accessioned2014-12-08T15:18:59Z-
dc.date.available2014-12-08T15:18:59Z-
dc.date.issued2009en_US
dc.identifier.isbn978-1-4244-2801-4en_US
dc.identifier.urihttp://hdl.handle.net/11536/13634-
dc.description.abstractThis paper demonstrates a high-frequency 0.35-mu m SiGe BiCMOS sub-harmonic downconverter with reactive in-phase and quadrature-phase (I/Q) generators. Two reactive I/Q generators are integrated in our work to provide differential quadrature RI and LO signals. The I/Q sub-harmonic downconverter with single-ended LO, RI, and IF (IM) ports has a conversion gain of 1 dB, IP(1dB) of -10 dBm, IIP(3) of 0 dBm and IIP(2) of 21 dBm at 16.4 GHz. The magnitude and phase errors between the I and Q channels are 1.34% and 0.6 degrees, respectively. The dc power consumption of this I/Q mixer without output buffers is approximately 5 mW.en_US
dc.language.isoen_USen_US
dc.subjectdirect conversionen_US
dc.subjectI/Qen_US
dc.subjectSiGe BiCMOSen_US
dc.subjectsub-harmonicen_US
dc.subjecttransformeren_US
dc.title16.4 GHz SiGe BiCMOS Sub-Harmonic Mixer With Reactive I/Q Generators in RF and LO Pathsen_US
dc.typeArticleen_US
dc.identifier.journalAPMC: 2009 ASIA PACIFIC MICROWAVE CONFERENCE, VOLS 1-5en_US
dc.citation.spage1172en_US
dc.citation.epage1175en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000279924300297-
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