完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Liu, CY | en_US |
dc.contributor.author | Wu, PH | en_US |
dc.contributor.author | Wang, A | en_US |
dc.contributor.author | Jang, WY | en_US |
dc.contributor.author | Young, JC | en_US |
dc.contributor.author | Chiu, KY | en_US |
dc.contributor.author | Tseng, TY | en_US |
dc.date.accessioned | 2014-12-08T15:18:59Z | - |
dc.date.available | 2014-12-08T15:18:59Z | - |
dc.date.issued | 2005-06-01 | en_US |
dc.identifier.issn | 0741-3106 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1109/LED.2005.848073 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/13638 | - |
dc.description.abstract | Sputter-deposited Cr-doped SrZrO3-based metal-insulator-metal structures exhibited bistable resistive reversible switching as observed under bias voltage and voltage pulse. The ratio of resistance of the two leakage states (high-H, low-L) was about five orders of magnitude. The conduction of the L-state satisfied Frenkel-Poole emission and that of the H-state followed ohmic mechanism, causing the resistance ratio to decrease with increasing bias voltage. The transition time of H- to L-state was five orders of magnitude higher than that of L- to H-state. The transition from H- to L-state was the restricted part for reversible switching operation. The difference in transition time of the two states should be related to the respective conduction mechanisms. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | conduction mechanism | en_US |
dc.subject | nonvolatile memory | en_US |
dc.subject | resistive switching memory | en_US |
dc.subject | SrZrO3 | en_US |
dc.title | Bistable resistive switching of a sputter-deposited Cr-doped SrZrO3 memory film | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1109/LED.2005.848073 | en_US |
dc.identifier.journal | IEEE ELECTRON DEVICE LETTERS | en_US |
dc.citation.volume | 26 | en_US |
dc.citation.issue | 6 | en_US |
dc.citation.spage | 351 | en_US |
dc.citation.epage | 353 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000229522000003 | - |
dc.citation.woscount | 75 | - |
顯示於類別: | 期刊論文 |