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dc.contributor.authorShen, Chang-Hongen_US
dc.contributor.authorShieh, Jia-Minen_US
dc.contributor.authorHuang, Wen-Hsienen_US
dc.contributor.authorWu, Tsung-Taen_US
dc.contributor.authorChen, Chien-Fuen_US
dc.contributor.authorKao, Ming-Hsuanen_US
dc.contributor.authorYang, Chih-Chaoen_US
dc.contributor.authorLin, Chein-Dinen_US
dc.contributor.authorWang, Hsing-Hsiangen_US
dc.contributor.authorHsieh, Tung-Yangen_US
dc.contributor.authorChen, Bo-Yuanen_US
dc.contributor.authorHuang, Guo-Weien_US
dc.contributor.authorChang, Meng-Fanen_US
dc.contributor.authorYang, Fu-Liangen_US
dc.date.accessioned2017-04-21T06:49:14Z-
dc.date.available2017-04-21T06:49:14Z-
dc.date.issued2014en_US
dc.identifier.isbn978-1-4799-8000-0en_US
dc.identifier.urihttp://hdl.handle.net/11536/136395-
dc.description.abstractFor the first time, we report heterogeneously integrated sub-40nm epi-like Ge/Si monolithic 3D-IC with low-power logic/NVM circuits and efficient photovoltaic energy harvester. Threshold voltage engineering and driving current boosting technologies enable stackable Ge/Si UTB (< 15nm) MOSFETs, CMOS inverter and SRAM (SNM=270mV@0.7V) achieve low operation voltage. Stackable 1-T NVM with high speed (100ns) and low driving-voltage operation provide power-off storage while SRAM serve as power-on working memory. 100% aperture ratio SiGeC ambient light energy harvester with maximum output power of 7mW/cm(2) layered on the monolithic 3D-IC chip envisions a self-powered monolithic 3D-IC technology for advanced low-power wire-less sensor networks, wearable devices, and devices for Internet of Things.en_US
dc.language.isoen_USen_US
dc.titleHeterogeneously integrated sub-40nm low-power epi-like Ge/Si monolithic 3D-IC with stacked SiGeC ambient light harvesteren_US
dc.typeProceedings Paperen_US
dc.identifier.journal2014 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000370384800013en_US
dc.citation.woscount0en_US
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