Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kuan, Chin-I | en_US |
dc.contributor.author | Lin, Horng-Chih | en_US |
dc.contributor.author | Li, Pei-Wen | en_US |
dc.contributor.author | Huang, Tiao-Yuan | en_US |
dc.date.accessioned | 2017-04-21T06:49:09Z | - |
dc.date.available | 2017-04-21T06:49:09Z | - |
dc.date.issued | 2016 | en_US |
dc.identifier.isbn | 978-1-4673-9478-9 | en_US |
dc.identifier.issn | 1930-8868 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/136427 | - |
dc.description.abstract | This work reports the first experimental submicron and sub-100 nm ZnON TFTs with excellent performance. Field-effect mobility values as high as 55 and 9.2 cm2/ V-s were measured from ZnON TFTs with channel lengths of 0.5 m and 75 nm, respectively. Those are the highest values ever reported on oxide-semiconductor TFTs of comparable channel length. The results confirm ZnON TFTs as an effective building block for the construction of BEOL circuits integrated in a chip. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Short-Channel BEOL ZnON Thin-Film Transistors with Superior Mobility Performance | en_US |
dc.type | Proceedings Paper | en_US |
dc.identifier.journal | 2016 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATION (VLSI-TSA) | en_US |
dc.contributor.department | 電機學院 | zh_TW |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | College of Electrical and Computer Engineering | en_US |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000389022000064 | en_US |
dc.citation.woscount | 0 | en_US |
Appears in Collections: | Conferences Paper |