Short-Channel BEOL ZnON Thin-Film Transistors with Superior Mobility Performance

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DC 欄位	值	語言
dc.contributor.author	Kuan, Chin-I	en_US
dc.contributor.author	Lin, Horng-Chih	en_US
dc.contributor.author	Li, Pei-Wen	en_US
dc.contributor.author	Huang, Tiao-Yuan	en_US
dc.date.accessioned	2017-04-21T06:49:09Z	-
dc.date.available	2017-04-21T06:49:09Z	-
dc.date.issued	2016	en_US
dc.identifier.isbn	978-1-4673-9478-9	en_US
dc.identifier.issn	1930-8868	en_US
dc.identifier.uri	http://hdl.handle.net/11536/136427	-
dc.description.abstract	This work reports the first experimental submicron and sub-100 nm ZnON TFTs with excellent performance. Field-effect mobility values as high as 55 and 9.2 cm2/ V-s were measured from ZnON TFTs with channel lengths of 0.5 m and 75 nm, respectively. Those are the highest values ever reported on oxide-semiconductor TFTs of comparable channel length. The results confirm ZnON TFTs as an effective building block for the construction of BEOL circuits integrated in a chip.	en_US
dc.language.iso	en_US	en_US
dc.title	Short-Channel BEOL ZnON Thin-Film Transistors with Superior Mobility Performance	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2016 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATION (VLSI-TSA)	en_US
dc.contributor.department	電機學院	zh_TW
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	College of Electrical and Computer Engineering	en_US
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000389022000064	en_US
dc.citation.woscount	0	en_US
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