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dc.contributor.authorYu, Ming-Jiueen_US
dc.contributor.authorLin, Ruei-Pingen_US
dc.contributor.authorChang, Yu-Hongen_US
dc.contributor.authorHou, Tuo-Hungen_US
dc.date.accessioned2017-04-21T06:49:25Z-
dc.date.available2017-04-21T06:49:25Z-
dc.date.issued2016en_US
dc.identifier.isbn978-1-4673-9478-9en_US
dc.identifier.issn1930-8868en_US
dc.identifier.urihttp://hdl.handle.net/11536/136435-
dc.language.isoen_USen_US
dc.titleReliable High-Voltage Amorphous InGaZnO TFT for Monolithic 3D Integrationen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2016 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATION (VLSI-TSA)en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000389022000056en_US
dc.citation.woscount0en_US
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