標題: Designer Ge Quantum-Dot Phototransistors for highly-integrated, broadband optical interconnects
作者: Kuo, Ming-Hao
Chien, Chung-Yen
Liao, Po-Hsiang
Lai, Wei-Ting
Li, Pei-Wen
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: optical interconnects;Ge quantum dot;phototransistor
公開日期: 2016
摘要: We report high-responsivity Ge quantum dots (QDs) MOS phototransistors as on-chip transducers for highly-integrated, broadband Si-based optical interconnects. Self-organized heterostructure of Ge-QD/SiO2/Si-channel is fabricated in a single step through selective oxidation of SiGe nano-pillars over a Si3N4 buffer layer on Si substrates. Dark current densities (10(-7)A/mm(2)), photocurrent-to-dark current ratio (similar to 10(7)) and photoresponsivities (>10 A/W), external quantum efficiency (similar to 240%), and response time (1.4ns) are measured on the Ge-QD phototransistors under 850 nm illumination. Detection wavelength is tunable from near infrared to near ultraviolet by reducing the QD size from 90 to 7 nm, and the optimal photoresponsivity is tailored by the QD size and effective thickness of gate dielectrics.
URI: http://hdl.handle.net/11536/136469
ISBN: 978-1-4673-8969-3
ISSN: 2159-3523
期刊: 7TH IEEE INTERNATIONAL NANOELECTRONICS CONFERENCE (INEC) 2016
Appears in Collections:Conferences Paper