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dc.contributor.authorHuang, Hau-Yuanen_US
dc.contributor.authorWu, Chien-Hungen_US
dc.contributor.authorWang, Shui-Jinnen_US
dc.contributor.authorChang, Kow-Mingen_US
dc.contributor.authorHsu, Hsin-Yuen_US
dc.date.accessioned2017-04-21T06:48:34Z-
dc.date.available2017-04-21T06:48:34Z-
dc.date.issued2014en_US
dc.identifier.isbn978-1-4799-5406-3en_US
dc.identifier.issn1548-3770en_US
dc.identifier.urihttp://hdl.handle.net/11536/136487-
dc.description.abstractIndium-gallium-zinc-oxide (IGZO) thin-film transistors are fabricated by atmospheric pressure plasma jet (APPJ) technique. HfO2 (25 nm) and Al2O3 (25 nm) are used as the gate dielectric stack. NH3 plasma treatment is applied to optimize the device performance by reducing the gate dielectric leakage and increasing the oxide capacitance. The best performance of the APPJ IGZO TFT is obtained with a 30W-60s NH3 plasma treatment with field-effect mobility of 6.1 cm(2)/V-s, subthreshold swing of 0.19 V/dec, and on/off current ratio of 10(8).en_US
dc.language.isoen_USen_US
dc.titleThe Influence of NH3 Plasma Treatment on Al2O3/HfO2 Gate Dielectrics of TFTs with Atmospheric Pressure Plasma Jet Deposited IGZO Channelen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2014 72ND ANNUAL DEVICE RESEARCH CONFERENCE (DRC)en_US
dc.citation.spage161en_US
dc.citation.epage+en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000346309800074en_US
dc.citation.woscount0en_US
Appears in Collections:Conferences Paper