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dc.contributor.authorKuo, Chien-Ien_US
dc.contributor.authorHsu, Heng-Tungen_US
dc.contributor.authorLu, Jung-Chien_US
dc.contributor.authorChang, Edward Yien_US
dc.contributor.authorWu, Chien-Yingen_US
dc.contributor.authorMiyamoto, Yasuyukien_US
dc.contributor.authorTsern, Wen-Chungen_US
dc.date.accessioned2014-12-08T15:19:01Z-
dc.date.available2014-12-08T15:19:01Z-
dc.date.issued2009en_US
dc.identifier.isbn978-1-4244-2801-4en_US
dc.identifier.urihttp://hdl.handle.net/11536/13656-
dc.description.abstractHigh performance MHEMTs using (In(x)Ga(1-x)As)(m)/(InAs)(n) superlattice structure as a channel layer have been fabricated successfully. These HEMTs with 80 nm gate length exhibit high drain current density of 392 mA/mm at drain bias 1.0 V and transconductance of 991 mS/mm at drain bias 1.2 V. Comparison with regular In(x)Ga(1-x)As channel, the superlattice channel HEMTs show an outstanding performance because of high electron mobility, and better carrier confinement in the (In(x)Ga(1-x)As)(m)/(InAs)(n) channel layer. The current gain cutoff frequency (f(T)) and maximum oscillation frequency (f(max)) were extracted to be 304 GHz and 162 GHz, respectively. The device demonstrated a 0.75 dB noise figure with an associated gain 9.6 dB at 16 GHz. The excellent device performance shows that the superlattice channel can be practically used for high-frequency and millimeter-wave application.en_US
dc.language.isoen_USen_US
dc.subjecthigh electron mobility transistorsen_US
dc.subjectInAsen_US
dc.subjectInGaAsen_US
dc.subjectsuperlattice channelen_US
dc.titleA Novel Metamorphic High Electron Mobility Transistors with (In(x)Ga(1-x)As)(m)/(InAs)(n) Superlattice Channel Layer for Millimeter-Wave Applicationsen_US
dc.typeArticleen_US
dc.identifier.journalAPMC: 2009 ASIA PACIFIC MICROWAVE CONFERENCE, VOLS 1-5en_US
dc.citation.spage1651en_US
dc.citation.epage1654en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000279924300421-
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