完整後設資料紀錄
DC 欄位語言
dc.contributor.authorJuang, JYen_US
dc.contributor.authorLin, HCen_US
dc.contributor.authorLiu, CKen_US
dc.contributor.authorWang, SJen_US
dc.contributor.authorYang, THen_US
dc.contributor.authorWu, KHen_US
dc.contributor.authorUen, TMen_US
dc.contributor.authorGou, YSen_US
dc.date.accessioned2014-12-08T15:02:44Z-
dc.date.available2014-12-08T15:02:44Z-
dc.date.issued1996-04-01en_US
dc.identifier.issn0577-9073en_US
dc.identifier.urihttp://hdl.handle.net/11536/1365-
dc.description.abstractTl2Ba2Ca2Cu3O10+x (Tl-2223) superconducting films with microstructure consisted of submillimeter size grains combining with reactive ion etching technique, has enabled us to investigate the transport properties of this material in a more controllable manner. Both conductivity fluctuations based on the Aslamazov-Larkin theory and the Kosterlitz-Thouless transitions were studied to delineate the two dimensional nature of the material. It was found that, depending on the substrate used, the effective thickness of critical fluctuation and the detailed features of the K-T transition were very different. For films deposited on LaAlO3(100) substrates, the effective thickness of critical fluctuation is about 35 Angstrom compared to a value of 17.5 Angstrom obtained for films deposited on MgO(100) substrate, roughly equal to the c-axis lattice constant and the distance between the trilayer CuO2 planes, respectively. The effective vortex dielectric constant measuring the correlations between vortex pairs near K-T transition were estimated to be 3.0 and 1.6 for films on LaAlO3 and on MgO, repectively. Possible mechanisms based on the defect structures are proposed to account for the observed results.en_US
dc.language.isoen_USen_US
dc.titleDimensionality and Kosterlitz-Thouless transition in single grain Tl-2223 superconducting thin filmsen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.journalCHINESE JOURNAL OF PHYSICSen_US
dc.citation.volume34en_US
dc.citation.issue2en_US
dc.citation.spage263en_US
dc.citation.epage270en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:A1996UK96800014-
顯示於類別:會議論文